In the circuit above, the function of resistor R and diode D are
to limit the current and to protect LED against over voltage
to limit the voltage and to protect LED against over current
to limit the current and protect LED against reverse breakdown voltage.
none of the above.
Correct answer is C
Resistance limits current and diode is reverse connected and therefore protects LED against reverse breakdown.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Correct answer is A
The increase in reverse resistance is due to widening of depletion layer.
The amount of photoelectric emission current depends on
frequency of incident radiation
intensity of incident radiation
both frequency and intensity of incident radiation
none of the above
Correct answer is B
Only the intensity of incident radiation governs the amount of photoelectric emission.
In an n channel JFET, the gate is
n type
p type
either n or p
partially n & partially p
Correct answer is B
Since channel is n type gate must be p type.
IEp and IEn are almost equal
IEp >> IEn
IEn >> IEp
either (a) or (c)
Correct answer is B
Emitter is p-type in p-n-p transistor.
Therefore holes are majority carriers.
Aptitude Tests