Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true
Correct answer is A
The increase in reverse resistance is due to widening of depletion layer.
The amount of photoelectric emission current depends on
frequency of incident radiation
intensity of incident radiation
both frequency and intensity of incident radiation
none of the above
Correct answer is B
Only the intensity of incident radiation governs the amount of photoelectric emission.
In an n channel JFET, the gate is
n type
p type
either n or p
partially n & partially p
Correct answer is B
Since channel is n type gate must be p type.
A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
100
99
1.01
0.99
Correct answer is A
β = (α / 1 - α) ⇒ (0.99 / 1 - 0.99) = 99 ⇒ Current gain = 1 + β = 100