Electronics and Communication Engineering questions and answers

Electronics and Communication Engineering Questions and Answers

Prepare for your Electronics and Communication Engineering exams/aptitude tests, assess your knowledge of electronics and communication equipment with these ECE questions and answers.

21.

An increase in temperature increases the width of depletion layer.

A.

True

B.

False

C.

Cannot say

D.

It depends

Correct answer is B

With increase in temperature, width of depletion layer decreases.

22.

In an n-p-n transistor biased for operation in forward active region

A.

emitter is positive with respect to base

B.

collector is positive with respect to base

C.

base is positive with respect to emitter and collector is positive with respect to base

D.

none of the above

Correct answer is C

In forward active mode, emitter base junction is forward biased and base collector junction is reverse biased.

23.

Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.

Reason (R): The addition of donor impurity creates additional energy levels below conduction band.

A.

Both A and R are true and R is correct explanation of A

B.

Both A and R are true but R is not a correct explanation of A

C.

A is true but R is false

D.

A is false but R is true

Correct answer is B

A refers to type semiconductor while R refers to n type semiconductor. Both A and R are correct but independent.

24.

If αac for transistor is 0.98, then βac is equal to

A.

51

B.

49

C.

47

D.

45

Correct answer is B

No explanation has been provided for this answer.

25.

Crossover distortion behaviour is characteristic of

A.

class A O/P stage

B.

class B O/P stage

C.

class AB output stage

D.

common pulse O/P state

Correct answer is B

No explanation has been provided for this answer.